MEMS filter chip

  • MEMS Filter Chip
MEMS Filter Chip

MEMS Filter Chip

  • Product description: MEMS Filter Chip
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MEMS Filter Chip


Features

MEMS -Manufacturing

Multilayer Si-Si bonding

50ΩCPW Input/Output

High-performance/Si Cavity Structure for Fully Shield Anti-interference

Wire bonding, easier for MCM

Environment Parameter

Working Temperature

-55~+85

Storage Temperature

-55~+125

CW Power

3W max@25

Electrical Characteristic (TA=+25)

Center Frequency

260GHz

BW1dB

1~100%

Insertion Loss@fo

IL0

VSWR

1.6

Impedance

50Ω

Rectangle Factor(6 section)

BW30dB/ BW3dB≤1.7

BW40dB/ BW3dB≤2

BW50dB/ BW3dB≤2.3

Estimated Center Insertion Loss: IL0=K×N/BW(100%)+0.2

K=3.5(1dB Fractional Bandwidth 120%)

K=4.5(1dB Fractional Bandwidth 20100%)

N: filter section BW(100%)= BW1dB/f0×100

Model

I. L.@f0

(dB)

BW1dB

(GHz)

Attenuation

(dB)

Size(mm)

SiBP6R5/1-6D2

1.8

6.0-7.0

40dB@5.1&7.8GHz

6.5×5.5×0.84

SiBP7R4/R6-6D2

2.0

7.12-7.7

40dB@6.35&8.4GHz

9×6×0.42

SiBP9R6/1-7D3

1.8

9.1-10.1

40dB@8.2&10.9GHz

7×4.1×0.84

SiBP10R4/1-7D3

1.9

9.9-10.9

40dB@8.9&11.7GHz

7×3.9×0.84

SiBP11R65/1R5-6D2

1.5

10.9-12.4

40dB@8&13.8GHz

5×4.2×0.84

SiBP14R15/1R9-6D2

2.2

13.2-15.1

40dB@12.2&16.0GHz

8×4×0.84

SiBP15/2R1-7D2

2.0

14-16

40dB@12.3&17.5GHz

7×3×0.84

SiBP22R45/1R9-6D2

1.5

21.5-23.4

40dB@10&25.2 GHz

5×3×0.84

SiBP26R1/3R8-6D2

1.5

24.2-28.0

35dB@20.92&30.67 GHz

7×3.4×0.84

SiBP28/6-7D2

1.0

25.2-31.2

40dB@21&34.4 GHz

7×3.5×0.84